Reading and writing data at multiple, individual non-volatile memory portions in response to data transfer sent to single relative memory address

ABSTRACT

A first memory portion of a plurality of memory portions is configured to determine a designated position of the first memory portion (in a predefined sequence of the plurality of memory portions), and to receive a sub-request conveyed to the plurality of memory portions in the first memory device. The sub-request has a single contiguous instruction portion and a plurality of data segments. The single contiguous instruction portion has a single relative memory address and a single set of one or more instructions to write the data segments. The first memory portion detects that the received sub-request includes an instruction to write data, and in response, identifies a first data segment allocated to the first memory portion, places the first data segment into a buffer of the first memory portion, and writes the buffered first data segment to a location in non-volatile memory of the first memory portion.

RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/145,434, “Method and System for Multi-Package Segmented DataTransfer Protocol for SSD Applications,” filed Apr. 9, 2015, which ishereby incorporated by reference in its entirety.

This application is related to U.S. patent application Ser. No.14/728,984, filed Jun. 2, 2015, which is hereby incorporated byreference in its entirety.

This application is related to U.S. patent application Ser. No.14/728,988, filed Jun. 2, 2015, which is hereby incorporated byreference in its entirety.

TECHNICAL FIELD

The disclosed embodiments relate generally to memory systems, and inparticular, to reducing the time taken to perform memory operationsacross multiple memory devices in parallel.

BACKGROUND

Storage needs for today's computing world are increasing at a rapidpace, particularly as many applications rely on cloud computingresources. Along with increased storage capacity, there is a great needto access storage resources quickly, and reliably. For example,solid-state drives used in enterprise storage applications must be ableto provide a relatively high number of I/O operations per second (IOPS),as data transfers to and from the drives become larger.

Data striping is a well-known technique for spreading data acrossmultiple devices. The technique allows for balancing I/O loads andincreasing data throughput. Conventional data striping requires storageof logical to physical address mapping for every stripe unit. Forexample, writing a stripe of data across eight die typically requireswriting eight stripe units and storing eight logical to physical addressmappings. Determining and storing the address mappings for every stripeunit requires time and consumes storage resources in a given storagesystem.

SUMMARY

In some aspects of the embodiments described herein, data striping ismade more efficient by the transmission of a single data transferrequest, having a single contiguous instruction portion includes arelative memory address or offset, and a data portion having multipledata segments to be written to multiple memory portions (e.g., flashmemory die) in a memory device. All the multiple memory portions (e.g.,flash memory die) in the memory device receive the same data transferrequest, and each automatically identifies and stores the data segmentcorresponding to that memory portion. In another aspect, the single datatransfer request includes one or more XOR instruction, and in responseto that request a particular memory portion in the memory device locallygenerates an XOR value by XORing one or more of the data segments witheither one or more of the other data segments or with a seed value, andlocally storing the resulting XOR value, while other memory portions inthe memory device each respond to the request by identifying and storinga data segment corresponding to that memory portion.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the present disclosure can be understood in greater detail, amore particular description may be had by reference to the features ofvarious implementations, some of which are illustrated in the appendeddrawings. The appended drawings, however, merely illustrate the morepertinent features of the present disclosure and are therefore not to beconsidered limiting, for the description may admit to other effectivefeatures.

FIG. 1 is a block diagram illustrating an implementation of a datastorage system in accordance with some embodiments.

FIG. 2 is a block diagram illustrating an implementation of a managementmodule in accordance with some embodiments.

FIG. 3A is a diagram of writing data to memory, in accordance with someembodiments.

FIG. 3B is a diagram of data packet partitioning in accordance with someembodiments.

FIG. 4 is a phase timing diagram of a conventional data stripingsub-request in accordance with some embodiments.

FIG. 5A is a diagram of writing data to memory, in accordance with someembodiments.

FIG. 5B is a diagram of data packet partitioning in accordance with someembodiments.

FIG. 6 is a phase timing diagram of a first sub-request in accordancewith some embodiments.

FIG. 7 is a phase timing diagram of a second sub-request in accordancewith some embodiments.

FIG. 8 is a phase timing diagram of a third sub-request in accordancewith some embodiments.

FIG. 9 is a phase timing diagram of a fourth sub-request in accordancewith some embodiments.

FIG. 10 is a phase timing diagram of an XOR sub-request in accordancewith some embodiments.

FIG. 11A is a diagram of a first proposed XOR sub-request processingarchitecture in accordance with some embodiments.

FIG. 11B is a diagram of a second proposed XOR sub-request processingarchitecture in accordance with some embodiments.

FIGS. 12A-12C illustrate a flowchart representation of a method ofperforming data striping at a storage controller in accordance with someembodiments.

FIGS. 13A-13B illustrate a flowchart representation of a method ofperforming data striping at a memory portion in accordance with someembodiments.

FIGS. 14A-14B illustrate a flowchart representation of a method ofbacking up data at a memory controller in accordance with someembodiments.

In accordance with common practice the various features illustrated inthe drawings may not be drawn to scale. Accordingly, the dimensions ofthe various features may be arbitrarily expanded or reduced for clarity.In addition, some of the drawings may not depict all of the componentsof a given system, method or device. Finally, like reference numeralsmay be used to denote like features throughout the specification andfigures.

DETAILED DESCRIPTION

The various implementations described herein include systems, devices,and/or methods that may improve the reliability with which data can beretained by a storage device. Some implementations include systems,devices, and/or methods to assemble a single sub-request to perform amemory operation across memory portions. Some implementations includesystems, devices and/or methods to perform memory operations at one ormore memory portions in accordance with a received sub-request. Someimplementations include systems, devices, and/or methods to back up dataacross memory portions.

(A1) In some embodiments, a memory controller receives a host command toperform a memory operation, where the host command includes a datapacket comprising a plurality of data divisions. In response toreceiving the host command, for each individual memory device of aplurality of memory devices in the set of memory devices, the memorycontroller assigns to the individual memory device a respective datadivision of the plurality of data divisions, where the respective datadivision includes a plurality of data segments, and each of the datasegments corresponds solely to a distinct individual one of the memoryportions (e.g., an individual flash memory die) of the individual memorydevice. The memory controller furthermore determines a single relativememory address associated with an address specified by the received hostcommand, assembles a sub-request comprising a single contiguousinstruction portion, which includes the single relative memory addressand one or more instructions to perform the memory operation, and therespective data division, and transmits the sub-request to every memoryportion of the individual memory device. In some embodiments, therespective data division follows the single contiguous instructionportion.

(A2) In some embodiments of the method of A1, the respective datadivision in the sub-request corresponds to a contiguous portion of thedata packet in the received host command.

(A3) In some embodiments of the method of A1 or A2, the respective datadivision includes a same number of data segments as the number of memoryportions of the individual memory device, and each of the data segmentscorresponds solely to an individual one of the memory portions of theindividual memory device.

(A4) In some embodiments of the method of any of A1-A3, the respectivedata division includes M data segments, where M is greater than one, andeach data segment of the M data segments comprises one or more pages ofdata.

(A5) In some embodiments of the method of any of A1-A3, the respectivedata division includes M data segments, where M is greater than one, andeach data segment of the M data segments has a size equal to anon-integer multiple of the size of a page of data.

(A6) In some embodiments of the method of A5, the sub-request furthercomprises memory portion markers positioned between neighboring datasegments of the M data segments.

(A7) In some embodiments of the method of any of A1-A6, the respectivedata division has a size equal to M multiplied by a data segment size,where M is greater than one.

(A8) In some embodiments of the method of any of A1-A7, the memoryoperation is a write operation and the single contiguous instructionportion of the sub-request includes a set of one or more writeinstructions.

(A9) In some embodiments of the method of any of A1-A8, the singlerelative memory address identifies a plane, a block and a page in eachmemory portion of the individual memory device.

(A10) In some embodiments of the method of any of A1-A9, each memoryportion corresponds to a single die.

(A11) In some embodiments of the method of any of A1-A10, the singlerelative memory address of the sub-request does not include distinctmemory addresses for each memory portion of the individual memorydevice.

(A12) In some embodiments of the method of any of A1-A11, the methodfurther includes performing a wear leveling operation, includingassigning a single wear level to the physical locations in the M memoryportions corresponding to the single relative memory address.

(A13) In some embodiments of the method of any of A1-A12, the storagesystem comprises one or more three-dimensional (3D) memory devices, eachwith a 3D array of memory cells, and circuitry associated with operationof memory elements in the one or more 3D memory devices.

(A14) In some embodiments of the method of A13, the circuitry and one ormore memory elements in a respective 3D memory device, of the one ormore 3D memory devices, are on the same substrate.

(A15) In another aspect, an electronic system or device (e.g., datastorage system 100, FIG. 1), includes a set of memory devices, eachmemory device comprising a number, greater than one, of memory portions,and a memory controller having one or more processors and memory storingone or more programs to be executed by the one or more processors. Thememory controller is furthermore configured to perform or controlperformance of any of the methods A1-A14.

(A16) In some embodiments of the electronic system or device of A15, thememory controller includes a sub-request formation module for assemblingthe sub-request and a location determination module for determining thesingle relative memory address.

(B1) In some embodiments, a memory controller is configured to receive ahost command to write data, where the host command includes a datapacket comprising one or more data divisions and a backup request tobackup at least a portion of the data packet. In response to receivingthe host command, the memory controller: assigns a first data divisionof the data packet to a first memory device having M memory portions,where M is an integer greater than one, and the first data divisionincludes a sequence of N data segments, where N is an integer less thanor equal to M, determines a single relative memory address associatedwith an address specified by the host command, assembles a sub-requestcomprising the single relative memory address, the N data segments ofthe first data division, and a set of instructions, and transmits thesub-request to every memory portion of the M memory portions of thefirst memory device. The set of instructions in the sub-request includesinstructions: to write the N data segments in N memory portions of thefirst memory device, to perform an XOR operation on one or more of the Ndata segments, and to write a resulting XOR value in a particular memoryportion of the M memory portions of the first memory device.

(B2) In some embodiments of the method of B1, the set of instructionsincludes information to perform an XOR operation at a first memoryportion of the M memory portions using at least one data segment in thesub-request and a predefined seed value stored in the first memoryportion.

(B3) In some embodiments of the method of any of B1-B2, the predefinedseed value stored in the first memory portion is derived from the atleast one data segment.

(B4) In some embodiments of the method of any of B1-B2, the predefinedseed value stored in the first memory portion is derived from the singlerelative memory address.

(B5) In some embodiments of the method of any of B1-B4, the set ofinstructions includes an instruction for the particular memory portionof the M memory portions to generate an XOR of all N data segments andto store the resulting XOR value in the particular memory portion.

(B6) In some embodiments of the method of any of B1-B4, the one or moreXOR instructions includes an instruction for each memory portion of twoor more of the M memory portions to generate an XOR of a particular pairof the N data segments and to store the resulting XOR value in theparticular memory portion.

(B7) In some embodiments of the method of any of B1-B4, the number ofdata segments, N is equal to the number of memory portions, M, and theone or more XOR instructions includes an instruction for the particularmemory portion to generate an XOR of a data segment corresponding to theparticular memory portion, and to store the resulting XOR value in theparticular memory portion.

(B8) In some embodiments of the method of any of B1-B7, each datasegment has a size equal to a non-integer multiple of the size of a pageof data, and the sub-request further comprises memory portion markerspositioned among the data segments.

(B9) In some embodiments of the method of any of B1-B8, the storagesystem comprises one or more three-dimensional (3D) memory devices, eachwith a 3D array of memory cells, and circuitry associated with operationof memory elements in the one or more 3D memory devices.

(B10) In some embodiments of the method B9, the circuitry and one ormore memory elements in a respective 3D memory device, of the one ormore 3D memory devices, are on the same substrate.

(B11) In another aspect, an electronic system or device (e.g., datastorage system 100, FIG. 1), includes a set of memory devices, eachmemory device comprising a plurality of memory portions, and a memorycontroller having one or more processors and memory storing one or moreprograms to be executed by the one or more processors. The memorycontroller is furthermore configured to perform or control performanceof any of the methods B1-B10.

(B12) In some embodiments of the electronic system or device of B11, thememory controller includes a sub-request formation module for assemblingthe sub-request and a location determination module for determining thesingle relative memory address.

(B13) In some embodiments of the electronic system or device of B11 orB12, the memory controller includes a data backup module for determiningif the host command includes a request to back up data at least aportion of the data packet.

(C1) In some embodiments, at a first memory portion of a plurality ofmemory portions is configured to determine a designated position of thefirst memory portion (e.g., in a predefined sequence of the plurality ofmemory portions), and to receive a sub-request conveyed to the pluralityof memory portions in the first memory device, where the sub-requestcomprises a single contiguous instruction portion and a plurality ofdata segments, and the single contiguous instruction portion comprises asingle relative memory address and a single set of one or moreinstructions to write the data segments. In some embodiments, the firstmemory portion detects that the received sub-request includes aninstruction to write data, and in response to detecting the instructionto write data: identifies, of the plurality of data segments, a firstdata segment allocated to the first memory portion, places the firstdata segment into a buffer of the first memory portion, and writes thebuffered first data segment to a location in non-volatile memory of thefirst memory portion, the location corresponding to the single relativememory address.

(C2) In some embodiments of the method of C1, each data segmentcomprises one or more pages of data.

(C3) In some embodiments of the method of any of C1-C2, each datasegment has a size equal to a non-integer multiple of the size of a pageof data.

(C4) In some embodiments of the method of C3, the sub-request furthercomprises memory portion markers positioned between neighboring datasegments, and identifying the first data segment includes detectingreceipt of a memory portion marker.

(C5) In some embodiments of the method of any of C1-C4, writing thebuffered first data segment includes: determining if a first location innon-volatile memory of the first memory portion, identified inaccordance with the relative memory address, includes one or more badmemory sub-portions; and in accordance with a determination that thefirst location includes one or more bad memory sub-portions, writing thebuffered first data segment to a second location in non-volatile memoryof the first memory portion, the second location corresponding to aremapping of the first location.

(C6) In some embodiments of the method of any of C1-C5, the singlerelative memory address identifies a page, (or a plane, a block and apage) in each memory portion of the plurality of memory portions.

(C7) In some embodiments of the method of any of C1-C6, the first memoryportion corresponds to a single die.

(C8) In some embodiments of the method of any of C1-C7, the singlerelative memory address of the sub-request does not include distinctmemory addresses for each memory portion of the first memory device.

(C9) In some embodiments of the method of any of C1-C8, the first memoryportion comprises one or more three-dimensional (3D) memory devices,each with a 3D array of memory cells, and circuitry associated withoperation of memory elements in the one or more 3D memory devices.

(C10) In some embodiments of the method of C9, the circuitry and one ormore memory elements in a respective 3D memory device, of the one ormore 3D memory devices, are on the same substrate.

(C11) In another aspect, a storage device (e.g., data storage device130-1, FIG. 1), includes a set of memory devices, a first memory deviceof the set of memory devices comprising a plurality of memory portions,and one or more memory controllers for controlling operation of thestorage system and responding to host commands. A first memory portionof the plurality of memory portions in the first memory device isconfigured to perform memory operations and to perform or controlperformance of any of the methods C1-C10.

(C12) In some embodiments of the storage device of C11, the first memorydevice includes read/write circuitry for selecting the location innon-volatile memory of the first memory portion, the locationcorresponding to the single relative memory address, and for causingperformance of a write operation to write the buffered first datasegment to the selected location in non-volatile memory of the firstmemory portion.

(C13) In some embodiments of the storage device of C11, the storagedevice includes read/write circuitry for selecting the location innon-volatile memory of the first memory portion, the locationcorresponding to the single relative memory address, and for causingperformance of a write operation to write the buffered first datasegment to the selected location in non-volatile memory of the firstmemory portion.

(C14) In yet another aspect, a non-transitory computer readable storagemedium stores one or more programs for execution by one or moreprocessors of an electronic system or device (e.g., data storage system100, FIG. 1 or memory controller 120, FIG. 1), the one or more programsincluding instructions for performing or controlling performance of anyof the methods A1-A14, B1-B10, or C1-C10 described herein.

(C15) In yet another aspect, an electronic system or device (e.g., datastorage system 100, FIG. 1 or memory controller 120, FIG. 1) comprisingmeans for performing or controlling performance of the operations of anyof the methods A1-A14, B1-B10, or C1-C10 described herein.

Numerous details are described herein in order to provide a thoroughunderstanding of the example implementations illustrated in theaccompanying drawings. However, some embodiments may be practicedwithout many of the specific details, and the scope of the claims isonly limited by those features and aspects specifically recited in theclaims. Furthermore, well-known methods, components, and circuits havenot been described in exhaustive detail so as not to unnecessarilyobscure more pertinent aspects of the implementations described herein.

FIG. 1 is a diagram of an implementation of a data storage system 100 inaccordance with some embodiments. While some example features areillustrated, various other features have not been illustrated for thesake of brevity and so as not to obscure more pertinent aspects of theexample embodiments disclosed herein. To that end, as a non-limitingexample, data storage system 100 is used in conjunction with a computersystem 110. Data storage system 100 includes a memory controller 120 andone or more storage devices 130 (e.g., storage devices 130-1 to 130-z).In some embodiments, a respective storage device 130 includes a singlememory device (e.g., a volatile memory device or a non-volatile memory(NVM) device such as a magnetic disk storage device, an optical diskstorage device, a flash memory device, a three-dimensional (3D) memorydevice or another semiconductor NVM memory device). In some embodiments,a respective storage device 130 includes a plurality of memory devices.In some embodiments, a memory device includes one or more memoryportions (e.g., one or more flash memory die). In some embodiments, eachmemory portion includes two or more individually addressable blocks(e.g., erase blocks). In one example, storage device 130-1 is one offour memory packages coupled with memory controller 120, and storagedevice 130-1 includes eight die. In some embodiments, storage device130-1 (or each storage device 130 in data storage system 100) includesNAND-type flash memory or NOR-type flash memory. Further, in someembodiments, memory controller 120 is a solid-state drive (SSD)controller. However, one or more other types of storage media may beincluded in accordance with aspects of a wide variety of embodiments.

Computer system 110 is coupled with memory controller 120 through dataconnections 101, and optionally control line 111. However, in someembodiments, computer system 110 includes memory controller 120 as acomponent and/or a sub-system. Computer system 110 may be any suitablecomputing device, such as a desktop computer, a laptop computer, atablet device, a netbook, an internet kiosk, a personal digitalassistant, a mobile phone, a smart phone, a gaming device, a wearablecomputing device, a computer server, or any other computing device.Computer system 110 is sometimes called a host or host system. In someembodiments, computer system 110 includes one or more processors, one ormore types of memory, a display, and/or other user interface componentssuch as a keyboard, a touch screen display, a mouse, a track-pad, adigital camera, and/or any number of supplemental devices to add I/Ofunctionality.

Each storage device 130 is coupled with memory controller 120 throughconnections 103. Connections 103 are sometimes called data connections,but typically convey commands in addition to data, and optionally conveyaddressing information, markers to separate data, programminginstructions, metadata, error correction information, and/or otherinformation in addition to data values to be stored in storage devices130-1 through 130-z and data values read from storage devices 130 (i.e.,storage devices 130-1 through 130-z). In some embodiments, however,memory controller 120 and storage devices 130 s are included in the samedevice as components thereof. Furthermore, in some implementationsmemory controller 120 and storage devices 130 s are embedded in a hostdevice, such as a mobile device, tablet, other computer, or computercontrolled device, and the methods described herein are performed by theembedded memory controller. Each storage device 130 may include anynumber (i.e., one or more) of memory devices including, withoutlimitation, non-volatile semiconductor memory devices, such as flashmemory. Furthermore, flash memory devices can be configured forenterprise storage suitable for applications such as cloud computing, orfor caching data stored (or to be stored) in secondary storage, such ashard disk drives. Additionally and/or alternatively, flash memory canalso be configured for relatively smaller-scale applications such aspersonal flash drives or hard-disk replacements for personal, laptop andtablet computers.

In FIG. 1, a respective storage device 130 (e.g., with one or morememory devices) includes a plurality of memory portions 131-A, . . . ,131-N. For example, a respective memory portion 131 is a die, block(e.g., an individually addressable block such as an erase block), wordline, page or a set of die in storage device 130. In some embodiments, arespective storage device 130 or a memory portion 131 in storage device130, is divided into a number of individually addressable (and, thus,individually selectable) blocks. In some embodiments, the individuallyselectable blocks are the minimum size erasable units in a flash memorydevice. Typically, when a flash memory block is erased, all memory cellsin the block are erased simultaneously. Each block is usually furtherdivided into a plurality of pages and/or word lines, where each page orword line is typically an instance of the smallest individuallyaccessible (readable) memory portion in a block. In some embodiments(e.g., using some types of flash memory), the smallest individuallyaccessible unit of a data set, however, is a sector, which is a subunitof a page. That is, a block includes a plurality of pages, each pagecontains a plurality of sectors, and each sector is the minimum unit ofdata for reading data from the flash memory device.

In some embodiments, each storage device 130 includes read/writecircuitry 135 for selecting a respective portion of storage device 130on which to perform a memory operation (e.g., a read, write, or eraseoperation) and for causing performance of the memory operation on therespective portion of storage device 130. In some embodiments,read/write circuitry 135 is embedded in each of the memory portions 131(e.g., flash die) of storage device 130, in the form of a localcontroller 132 (sometimes called a low-level controller) in each memoryportion 131. In some embodiments, the local controller 132 includes oneor more processors and/or one or more state machines that cause thememory portion 131 to perform various memory operations on the memoryportion 131. Further, in some embodiments, each memory portion 131includes one or more data buffers 133 for temporarily storing data beingwritten to the memory portion 131 or data being read from the memoryportion 131.

In a typical implementation, without limitation, one block in a flashmemory die includes a number of pages (e.g., 64 pages, 128 pages, 256pages, or another suitable number of pages). In some implementations,blocks in a flash memory die are grouped into a plurality of zones,sometimes called planes. Flash memory die having more than one plane (orzone) are sometimes called multi-plane flash memory die. Typically, eachblock zone of the die is in a physically distinct region of the die,such as a particular half or particular quadrant of the memory cellarray in the die. In some implementations, each block zone of a flashmemory die is independently managed to some extent, which increases thedegree of parallelism for parallel operations and simplifies managementof the respective storage device 130 that includes the flash memory die.

In some embodiments, memory controller 120 includes management module121, input buffer 123, output buffer 124, error control module 125, andstorage medium interface 128. In some embodiments, memory controller 120includes various additional features that have not been illustrated forthe sake of brevity and so as not to obscure more pertinent features ofthe example embodiments disclosed herein, and that a differentarrangement of features may be possible. Input buffer 123 and outputbuffer 124 provide an interface to computer system 110 through dataconnections 101. Similarly, storage medium interface 128 provides aninterface to storage device 130 though connections 103. In someembodiments, storage medium interface 128 includes read and writecircuitry, including circuitry capable of providing reading signals tostorage device 130 (e.g., reading threshold voltages for NAND-type flashmemory).

In some embodiments, management module 121 includes one or moreprocessing units 120 (also sometimes called one or more processors,central processing units or CPUs) configured to execute instructions inone or more programs (e.g., programs stored in controller memory, inmanagement module 121). In some embodiments, one or more CPUs 122 areshared by one or more components within, and in some cases, beyond thefunction of memory controller 120. Management module 121 is coupled withinput buffer 123, output buffer 124 (connection not shown), errorcontrol module 125, and storage medium interface 128 in order tocoordinate the operation of these components.

Error control module 125 is coupled with storage medium interface 128,input buffer 123 and output buffer 124. Error control module 125 isprovided to limit the number of uncorrectable errors inadvertentlyintroduced into data. In some embodiments, error control module 125 isexecuted in software by one or more CPUs 122 of management module 121,and, in other embodiments, error control module 125 is implemented inwhole or in part using special purpose circuitry to perform encoding anddecoding functions. To that end, error control module 125 includes anencoder 126 and a decoder 127. In some embodiments, error control module125 is configured to encode data (i.e., with encoder 126) and decoderead data (i.e., with decoder 127) according to one of a plurality ofECC techniques, such as Reed-Solomon, turbo-code,Bose-Chaudhuri-Hocquenghem (BCH), low-density parity check (LDPC), orother error control codes, or a combination thereof

Those skilled in the art will appreciate that various error controlcodes have different error detection and correction capacities, and thatparticular codes are selected for various applications for reasonsbeyond the scope of this disclosure. As such, an exhaustive review ofthe various types of error control codes is not provided herein.Moreover, those skilled in the art will appreciate that each type orfamily of error control codes may have encoding and decoding algorithmsthat are particular to the type or family of error control codes. On theother hand, some algorithms may be utilized at least to some extent inthe decoding of a number of different types or families of error controlcodes. As such, for the sake of brevity, an exhaustive description ofthe various types of encoding and decoding algorithms generallyavailable and known to those skilled in the art is not provided herein.

In some embodiments, during a write operation, input buffer 123 receivesdata to be stored in one or more storage devices 130 from computersystem 110 (e.g., write data). The data received by input buffer 123 ismade available to encoder 126, which encodes the data by applying anerror control code to produce one or more codewords. The one or morecodewords are made available to storage medium interface 128, whichtransfers the one or more codewords to one or more storage devices 130in a manner dependent on the type of storage medium being utilized.

In some embodiments, a read operation is initiated when computer system(host) 110 sends one or more host read commands to memory controller 120(e.g., via data connection 101 and/or control line 111) requesting datafrom data storage system 100. In response to the one or more host readcommands, memory controller 120 sends one or more read access commandsto one or more of storage devices 130 (e.g., via storage mediuminterface 128), to obtain “raw” read data in accordance with memorylocations (or logical addresses, object identifiers, or the like)specified by the one or more host read commands. Storage mediuminterface 128 provides the raw read data (e.g., comprising one or morecodewords) to decoder 127. Decoder 127 applies a decoding process to theencoded data to recover the data, and to correct errors in the recovereddata within the error correcting capability of the error control codethat was used to encode the codeword. If the decoding is successful, thedecoded data is provided to output buffer 124, where the decoded data ismade available to computer system 110. In some embodiments, if thedecoding is not successful, memory controller 120 may resort to a numberof remedial actions or provide an indication of an irresolvable errorcondition.

Flash memory devices (e.g., in storage medium 130) utilize memory cellsto store data as electrical values, such as electrical charges orvoltages. Each flash memory cell typically includes a single transistorwith a floating gate that is used to store a charge, which modifies thethreshold voltage of the transistor (i.e., the voltage needed to turnthe transistor on). The magnitude of the charge, and the correspondingthreshold voltage the charge creates, is used to represent one or moredata values. In some embodiments, during a read operation, a readingthreshold voltage is applied to the control gate of the transistor andthe resulting sensed current or voltage is mapped to a data value.

The terms “cell voltage” and “memory cell voltage,” in the context offlash memory cells, mean the threshold voltage of the memory cell, whichis the minimum voltage that needs to be applied to the gate of thememory cell's transistor in order for the transistor to conduct current.Similarly, reading threshold voltages (sometimes also called readingsignals and reading voltages) applied to a flash memory cells are gatevoltages applied to the gates of the flash memory cells to determinewhether the memory cells conduct current at that gate voltage. In someembodiments, when a flash memory cell's transistor conducts current at agiven reading threshold voltage, indicating that the cell voltage isless than the reading threshold voltage, the raw data value for thatread operation is a “1” and otherwise the raw data value is a “0.”

FIG. 2 is a block diagram illustrating an exemplary management module121, in accordance with some embodiments. Management module 121typically includes one or more processing units 122 (also sometimescalled CPU(s), processor(s), microprocessor(s), microcontroller(s), orcore(s)) for executing modules, programs and/or instructions stored inmemory 206 and thereby performing processing operations, memory 206(sometimes called controller memory), and one or more communicationbuses 208 for interconnecting these components. The one or morecommunication buses 208 optionally include circuitry (sometimes called achipset) that interconnects and controls communications between systemcomponents. Management module 121 is coupled with input buffer 123,output buffer 124, error control module 125, and the one or more storagedevices 130 by the one or more communication buses 208. Memory 206includes volatile memory (e.g., high-speed random access memory devices,such as DRAM, SRAM, DDR RAM, or other random access solid state memorydevices), and may include non-volatile memory (e.g., one or more NVMdevices, such as magnetic disk storage device(s), optical disk storagedevice(s), flash memory device(s), or other non-volatile solid statestorage device(s)). Memory 206 optionally includes one or more storagedevices remotely located from the one or more processing units 122.Memory 206, or alternately the non-volatile memory device(s) withinmemory 206, comprises a non-transitory computer readable storage medium.

In some embodiments, memory 206, or the computer readable storage mediumof memory 206 stores the following programs, modules, and datastructures, or a subset or superset thereof:

-   -   data read module 212 for reading data, or causing data to be        read, from storage devices 130;    -   data write module 214 for writing data, or causing data to be        written, to storage devices 130;    -   data erase module 216 for erasing data, or causing data to be        erased, from storage devices 130;    -   request handling module 218 for receiving memory operation        commands from the host (e.g., computer system 110, FIG. 1) or        other internal processes;    -   wear leveling module 220 for optimally determining pages or        blocks of storage devices 130 for storing data so as to evenly        wear the pages or blocks of storage device 130;    -   data assignment module 222 for assigning respective divisions        (i.e., portions) of data in a data packet (e.g., for reading or        writing) to respective storage devices 130 in data storage        system 100;    -   segment sizing module 224 for determining or allocating the size        of one or more data segments of a respective data division of        data being sent to one or more storage devices 130 for storage,        where in some embodiments the number of data segments is less        than or equal to the number of memory portions (e.g., die) in        the one or more storage devices 130;    -   location determination module 226 for determining a single        relative memory address across one or more memory portions in a        respective storage device 130, where in some embodiments the        single relative memory address includes a physical address that        is associated with or derived or mapped from an address        specified by a host command;    -   location table 228 for maintaining and storing a        logical-to-physical map which maps logical addresses recognized        by the host (e.g., computer system 110, FIG. 1) to physical        addresses in one or more storage devices 130;    -   instruction determination module 230 for determining, forming or        assembling instructions sent to one or more storage devices 130,        where in some embodiments the instructions are associated with a        host command to perform a memory operation, and in some        embodiments the instructions are assembled into a single        contiguous set;    -   data backup module 232 for determining if a host command        includes a request to back up data to be written to a respective        storage device 130, and in some embodiments determining XOR        instructions for performing a back up of data to one or more        memory portions of the storage device 130;    -   sub-request formation module 234 for assembling a sub-request        comprising one or more of a single relative memory address        (e.g., from location determination module 226) and one or more        instructions (e.g., a single contiguous set of instructions from        module 230 and/or XOR instructions from module 232) to send to a        respective storage device 130, where in some embodiments the        sub-request includes data to be written to the respective        storage device 130 (e.g., a respective data division assigned to        the respective storage device 130).

The terms “division” and “data division” mean a portion of a datapacket, and more specifically mean the portion of a data packet that issent to a memory device for storage. This term does not, by itself,specify any particular way of determining which portion of a data packetis the data division sent to a particular memory device, although insome embodiments each data division of a data packet consists of acontiguous portion of the data packet.

Each of the above identified elements may be stored in one or more ofthe previously mentioned memory devices, and corresponds to a set ofinstructions for performing a function described above. The aboveidentified modules or programs (i.e., sets of instructions) need not beimplemented as separate software programs, procedures or modules, andthus various subsets of these modules may be combined or otherwisere-arranged in various embodiments. In some embodiments the aboveidentified modules or programs perform operations on one or more storagedevices. In some embodiments, memory 206 may store a subset of themodules and data structures identified above. Furthermore, memory 206may store additional modules and data structures not described above. Insome embodiments, the programs, modules, and data structures stored inmemory 206, or the non-transitory computer readable storage medium ofmemory 206, provide instructions for implementing any of the methodsdescribed below with reference to FIGS. 12A-12C, 13A-13B and 14A-14B. Insome embodiments, some or all of these modules may be implemented withreference to FIGS. 12A-12C, 13A-13B and 14A-14B specialized hardwarecircuits that subsume part or all of the module functionality.

Although FIG. 2 shows a management module 121, FIG. 2 is intended moreas functional description of the various features which may be presentin a management module than as a structural schematic of the embodimentsdescribed herein. In practice, and as recognized by those of ordinaryskill in the art, items shown separately in FIG. 2 could be combined andsome items could be separated.

FIG. 3A illustrates a conventional approach to sending requests tomemory portions 308 of memory devices 306, such as host requests 302from a host (e.g., computer system 110, FIG. 1) to read or write data.In some embodiments, memory portions 308 are die (e.g., non-volatileflash memory), and memory devices 306 (e.g., packages) include one ormore die. One or more host requests 302 go to one controller ofcontrollers 304. For example, host request 1 302 a is a request to writedata, sent to controller 1 304 a. Controller 1 304 a interprets thatrequest by assigning the data to a memory device 306 c (e.g., package3), assigning segments of the data to individual memory portions 308 ofthe memory device 306 c, and sending multiple die-specific requests 307via path 305 c to device 306 c, which conveys the multiple die-specificrequests 307 to corresponding individual die 308. In this systemarchitecture, die-specific requests 307 include die-specific (or,equivalently, data segment-specific) address information for everymemory portion 308 of a given memory device (e.g., device 306 c) towhich data is sent for storage.

FIG. 3B is a diagram of a conventional approach to data packetpartitioning. This diagram illustrates an exemplary host request 302 ato write data to various die, as shown in FIG. 3A above. In thisexample, a data packet of length D is received at the controller fromthe host. The controller (e.g., controller 304 a) partitions the data oflength D in a write request 310, across the four memory devices 306(e.g., packages 1-4) it is communicatively coupled to. In this example,data packet D is partitioned into 4 equally-sized data divisions, D1,D2, D3 and D4, issued as memory device write requests 312 (e.g., 312a-312 d). Each data division is then further divided into as many datasegments (e.g., data segment 313), as there are memory portions 308(e.g., die 1-M) of the associated memory device (e.g., D1=C1+C2+C3 . . .+CM). These data segments are assigned to respective memory devices bydie-specific requests (e.g., die-specific request 307 m to die M ofpackage 3 306 c, FIG. 3A). This approach requires two tiers of datapartitioning for one host write request, and lengthy processing time bya controller to address every data segment to a particular memoryportion. In a similar, but reversed fashion, the controller issues atwo-tiered read request to retrieve data from memory portions of amemory device. This requires retrieving addressing information for eachdata segment to be reassembled back into a data division of a datapacket.

FIG. 4 is an example of a phase timing diagram of a conventional set ofrequests to write data segments in multiple die of a storage device 130.In this example, a controller (e.g., controller 304 a, FIG. 3A), sends aset of requests 400 to a package (e.g., a particular storage device130), for writing data segments 406 and 416 onto the die of the package.FIG. 4 illustrates a set of requests 400 for writing data onto eight dieof a particular package.

The set of requests 400 includes various instructions, addressinformation and data segments interspersed throughout the set ofrequests, to write data onto the eight die. This approach illustratesserially sending die-specific requests to perform write operations,which in this example write one 8 kb page of data per plane to each dieof eight die. For each die, the set of requests 400 includes anaddress-initializing instruction 402 preceding 5-byte address 404, andaddress-initializing instruction 412 preceding 5-byte address 414.Writing to both planes of a respective multi-plane die requiresseparately addressing of the page location of each plane in each die.For example, 5-byte address 404 identifies the specific die, plane,block and page for writing the data in the following data segment 406.Similarly, 5-byte address instruction 414 identifies the specific die,plane, block and page for writing the data in the following data segment416, which is written to the same die as data segment 406. In someembodiments, the set of requests 400 include a plane-switchinginstruction 408, followed by a wait instruction 410 before theaddressing and data instructions for a second plane of a respective die.In this example, programming instruction 418 indicates to a respectivememory portion that the preceding data (e.g., data segment 406 and datasegment 416) is to be written to memory.

The serial nature of writing data to all the die of a memory packageusing a sequence of separate die-specific instructions results inseveral limitations. For example, the memory controller experiencesextensive overhead while partitioning data into data segments, andgenerating a separate write command for each die and separatelyaddressing every individual data segment (e.g., a page) for everyindividual die. For the approach shown in FIG. 4, the speed of writingdata packets received from the host is limited by the speed ofgenerating and transmitting die-specific commands to individual die of apackage. Additionally, burst-write capability is limited in speed due tothe lack of parallelism at the die level of the storage system.

FIG. 4 additionally shows timeline 420, illustrating the time forperforming one set of data and addressing instructions to program onedie out of the set of eight die receiving the set of requests 400. Inthis exemplary timeline 420, the time to perform an instruction isrepresented by t_(INST), the time to read out address 404 is t_(ADDR)and the time to set up and hold the data for data segment 406 or datasegment 416 is t_(DATA). In this exemplary timeline 420, the time tosend the set of requests 400 to all eight die of the memory device, is8*(t_(INST)+t_(ADDR)+t_(DATA)+t_(INST)+t_(INST)+t_(ADDR)+t_(DATA)+t_(INST))=32*t_(INST)+16*t_(ADDR)+16*t_(DATA).

FIG. 5A is a diagram of writing data to memory, in accordance with someembodiments. FIG. 5A illustrates an improved technique (as compared tothe one in FIG. 3A), for sending requests 502, to memory portions 508,associated with host commands. In some embodiments, memory portions 508are die (e.g., non-volatile flash memory), and one or more memorydevices 506 (e.g., packages) include one or more die. One or more hostrequests 502 go to one controller of controllers 504. For example, hostrequest 1 502 a, which is a request to write data, is sent to controller1 504 a. Controller 1 504 a interprets that request by assigning adivision (e.g., a portion) of the data specified by request 502 a to amemory device 506 c (e.g., package 3) and sending a correspondingsub-request 505 c, which includes the assigned data division, to device506 c. In some embodiments, when generating the sub-request to be sentto a particular memory device, controller 1 504 a determines a singlerelative memory address associated with an address specified by thereceived host command. For example, controller 1 504 a determines thathost request 1 502 a includes a command to write data to a particularlogical address, and retrieves or obtains a corresponding physicaladdress offset, herein called a relative memory address. In thisexample, the physical address offset is a single relative memory addressthat indicates a relative position within each memory portion 508 ofmemory device 506 c (e.g., package 3) at which to store a data segmentof the data division included in sub-request 506 c. From anotherviewpoint, the addresses in memory device 506 c at which the datasegments are to be stored are addresses obtained by adding the relativememory address (or a portion of that relative memory address thatspecifies an address offset) specified by sub-request 506 c to a baseaddress for each memory portion 508 of memory device 506 c to which datais to be stored.

Sending a single sub-request having a single relative memory address isin contrast to sending multiple sub-requests (to memory portions inmemory device 506 c) that each specify distinct, individual addressesfor individual memory portions involved in the storage or retrieval ofdata associated with a host command, shown in FIG. 3A. In someembodiments, the single relative memory address is an offset value, suchas an offset from a base location or address of each memory portion ofthe memory device or an offset from the last physical address to whichdata was written in each memory portion of the memory device. In someembodiments, the single relative memory address specifies or correspondsto the same physical memory address within each memory portion (e.g.,the same local physical address, indicating the same block B and page P,within each flash memory die in the memory device).

As shown in FIG. 5A, controller 1 504 a does not create several“die-specific requests,” but rather sends a single, package-levelrequest 507 to all the memory portions of the corresponding memorydevice 506 c (e.g., all the die of package 3). In some embodiments, thesingle, package-level request 507 is the same as sub-request 505 c(e.g., sub-request 505 c passes through a package to the die with addingadditional information and without additional processing). For ease ofdiscussion, except when otherwise indicated, a single package-levelrequest will hereinafter be considered to be the same as a correspondingsub-request. However, in some embodiments or in some circumstances, asingle package-level request differs from a corresponding sub-request.For example, in some embodiments, additional processing is performed onsub-request 505 c to produce the single, package-level request 507.

In some embodiments, sub-request 505 c includes a single contiguous setof one or more instructions to perform a memory operation. In otherwords, in some embodiments, sub-request 505 c does not include separate,individualized instructions for performing a memory operation at eachmemory portion of the corresponding memory device.

FIG. 5B is a diagram of data packet partitioning in accordance with someembodiments. This diagram illustrates an exemplary host request 502 a towrite data to a data storage system, as shown in FIG. 5A above. In thisexample, a data packet of length D is received at the controller (e.g.,controller 1 504 a) from the host. The controller partitions the dataacross four memory devices 506 (e.g., packages) to which it iscommunicatively coupled. In this example, data packet D is partitionedinto four equally-sized data divisions, D1, D2, D3 and D4. In contrastto the example shown in FIG. 3A, each data division (e.g., D1-D4) is notfurther divided into M portions for storage in the M memory portions(e.g., M die) in the associated memory device. FIG. 5B shows that insome embodiments, a sub-request 505 a contains the entire associateddata division 513, without being partitioned. In some embodiments, adata division includes as many equally-sized data segments as there arememory portions in the associated memory device (e.g., M memoryportions, each having a data segment of size C), but the data divisionis not partitioned by commands and/or addresses between the datasegments. This reduction in addressing of individual data segmentsallows for simpler, faster processing by the controller (e.g.,controller 1 504 a, FIG. 5A).

FIG. 6 is a phase timing diagram of a first example of a sub-request inaccordance with some embodiments. FIG. 6 illustrates a sub-request 600that includes a first contiguous portion, herein called an instructionportion 612, and a second contiguous portion, herein called a dataportion 614. In some embodiments, the instruction portion 612 includes acontiguous sequence of addressing and programming instructions, such asinstructions 602, 604, 606 and 608. In some embodiments, sub-request 600includes one contiguous set of instructions followed or preceded by onecontiguous set of data segments 610. In the example shown in FIG. 6,each data segment 610 consists of two complete 8 kb pages.

Sub-request 600 illustrates a streamlined approach to data stripingacross memory portions of a memory device. Instruction portion 612includes an all-die-select instruction 602 to instruct each memoryportion to scan sub-request 600 for data corresponding to that memoryportion. This is followed by an address-initializing instruction 604 toinstruct each memory portion that a single relative memory address 606will follow. In exemplary sub-request 600, single relative memoryaddress 606 is a 3-byte address to identify a block and page within eachmemory portion (e.g., each die). In this example, the single relativememory address 606 is able to be condensed from 5 bytes (as shown inFIG. 4), to 3 bytes, because there is no need to identify a memoryportion (e.g., die), or plane in this case. The instruction portion 612,including memory address 606 applies to every memory portion, equally,therefore there is no need to reserve addressing space for identifyingspecific memory portions. Since each data segment 610 consists of twocomplete 8 kb pages, both planes at the physical location correspondingto memory address 606, are to be filled. Programming instruction 608instructs the memory portions receiving sub-request 600 to each performa write operation on a corresponding portion of the data withinsub-request 600.

In some embodiments or in some circumstances, a sub-request sent to allthe memory portions of a memory device includes a data-read instructioninstead of programming instruction 608, in which case the sub-requestcan be called a read sub-request. In such embodiments or circumstances,the sub-request includes no data segments, and thus has only instructionportion 612 (FIG. 6). In response to the read sub-request, memoryportions retrieve data segments in accordance with single relativememory address 606 and load them into a buffer (e.g., data buffer 133,FIG. 1) for transmitting to the memory controller that sent sub-request600.

In some embodiments or in some circumstances, a sub-request includes anerase instruction instead of programming instruction 608, in which casethe sub-request can be called an erase sub-request. In such embodimentsor circumstances, the sub-request includes no data segments, and thushas only instruction portion 612 (FIG. 6). In response to the erasesub-request, memory portions locate data segments in accordance withsingle relative memory address 606 and erase the contents of thoselocations in memory. Typically, erasing is performed on block-sized datasegments in each memory portion, since blocks are the minimum sizeerasable units in a flash memory device.

In the write sub-request example shown in FIG. 6, data segments 610 areequally-sized and each contain two pages worth of data (e.g., for an 8kb page size). In this example, a respective die writes the data in itsassociated data segment on both planes at the location determined by thesingle relative memory address 606. For example, the first data segment610 a is written to die 0 of the memory package that receivessub-request 600, and more specifically the first 8 kb page of the firstdata segment 610 a is written to plane 0 and the second 8 kb page of thefirst data segment 610 a is written to plane 1 of die 0. Similarly, eachof the other data segments 610 b-610 h are written in part to plane 0and in part to plane 1 of a corresponding memory portion (e.g., flashmemory die), at locations within those planes and die specified by thesingle relative memory address 606 of the write sub-request 600.

In some embodiments, at least one memory portion (and in someembodiments each memory portion) receiving sub-request 600 is programmedto store an entire data segment 610 at the one or more physicaladdresses in the memory portion specified by the single relative memoryaddress 606. In some embodiments, at least one memory portion in amemory device is programmed to recognize its relative position among theother memory portions. In some embodiments, each memory portion in amemory device is programmed to determine which data segment 610 in thedata portion 614 it is assigned to store. For example, die 4 isprogrammed to recognize that it is the fifth die in a package and it isprogrammed to detect the fifth data segment 610 e, to write to itsmemory. In some embodiments, the determination of which data segment inthe data portion to store is made by scanning the received data portion614, counting data segments, or using a predetermined data portionoffset, until the data segment corresponding to that data portion isreceived. Data segments (if any) received prior to the data segmentcorresponding to the memory portion are counted, but not stored, and thedata segment corresponding to the memory portion is stored in the memoryportion at one or more locations (e.g., within one or more planes)within the memory portion, as specified by the single relative memoryaddress 606.

FIG. 6 additionally shows timeline 616, illustrating the time forsending data and addressing instructions to a set of eight die receivingsub-request 600. In this exemplary timeline 616, the time to send aninstruction is represented by t_(INST), the time to send address 606 ist_(3ADDR) (i.e., a different, shorter time than t_(ADDR) in FIG. 4) andthe time to send the data for one 8 kb page is t_(DATA). In thisexemplary timeline 616, the time to send sub-request 600 to all eightdie of the memory device, is t_(INST)+t_(INST)+t_(3ADDR)+t_(INST)+2*8*t_(DATA)=3*t_(INST)+t_(3ADDR)+16*t_(DATA). In comparison, the totaltime for performing instructions and addressing the data segments insub-request 400, FIG. 4, was 32*t_(INST)+16*t_(ADDR)+16*t_(DATA).

FIG. 6, and the embodiments shown in FIG. 7, FIG. 8 and FIG. 9,illustrate timing and storage gains achieved by addressing data storedin “stripes” across a plurality of memory portions (e.g., data stripesacross a set of die), as opposed to addressing individual “stripe units”of data (e.g., each data segment). A large burst of data can beminimally addressed and processed as it is written to memory. Thesetiming and storage gains are even greater in multi-plane storage devices(e.g., TLC or EX3 memory). For example, as shown in FIG. 4, to write twopages of data (one per plane), to a particular page number in MLCmemory, two sequences of an address-initializing instruction 402, 5-byteaddress 404 and data segment 406 are required in sub-request 400. In thecase of TLC memory, three sequences would be required, and the timetaken to transmit a set of requests to all the memory portions of amemory device will correspondingly increase.

In some embodiments, another advantage to addressing data on astripe-basis, is an improvement in garbage collection and wear levelingacross memory portions in a memory device. Writing data segments acrossall the memory portions of a memory device in parallel naturallyprovides more balanced wear, and mitigates the problem of reachingend-of-life of the device too soon. Further, the memory controller needsto keep track of only one set of program/erase cycle (P/E) values, withjust one P/E value per stripe of blocks, for a package containingmultiple memory die. For example, in a memory device having N flashmemory die, each having B blocks (e.g., erase blocks), the memorycontroller keeps track of only B program/erase cycle values (one foreach of B stripes of blocks), instead of N×B program/erase cycle values,and furthermore the only program/erase cycle values that the memorycontroller uses to determine which flash memory blocks to garbagecollect and erase are the B program/erase cycle values for the B stripesof blocks. This results in reduced complexity in wear level managementfor the memory device, since each stripe of blocks across all the flashmemory die in the memory device are treated as a single entity forpurposes of wear leveling and garbage collection.

It is noted that while sub-request 600 is transmitted to the memoryportions of one memory device, there may be one or more parallelsub-requests transmitted to the memory portions of other memory devices.

As explained below in more detail, in some embodiments all but one ofthe memory portions in a memory device are programmed to function asexplained above, writing a respective data segment in response to awrite sub-request sent to all memory portions of the memory device,while the remaining memory portion performs a different operation (e.g.,XORing all the data segments stored by the other memory portions). Inyet some other embodiments, a first subset of the memory portions in amemory device are programmed to function as explained above, writing arespective data segment in response to a write sub-request sent to allmemory portions of the memory device, while a second subset of thememory portions perform a different operation.

FIG. 7 is a phase timing diagram of a second sub-request 700 inaccordance with some embodiments. FIG. 7 illustrates a sub-request 700including a first contiguous portion, instruction portion 714, and asecond contiguous portion, data portion 716. In some embodiments, theinstruction portion 714 includes a combination of addressing andprogramming instructions, such as instructions 702, 704, 706 and 708. Insome embodiments, sub-request 700 includes one contiguous set ofinstructions followed or preceded by one contiguous set of data segments712. In the example shown in FIG. 7, each data segment 712 consists ofdata less than or equal to one complete 8 kb page.

Sub-request 700 illustrates another stream-lined approach to datastriping across memory portions of a memory device. Instruction portion714 includes an all-die-select instruction 702 to instruct each memoryportion to start reading sub-request 700 for data corresponding to thatmemory portion. This is followed by an address-initializing instruction704 to instruct each memory portion that a single relative memoryaddress 706 will follow. In exemplary sub-request 700, single relativememory address 706 is a 5-byte address to identify a plane, block andpage within each memory portion (e.g., each die). In this example,single relative memory address 706 need not identify any specific die,and the value in a die portion (if any) of address 706 is ignored, asall-die-instruction 702 instructs every die in the memory device toreceive the same instructions and addressing information.

In some embodiments, data segments 712 in data portion 716 areequally-sized and each contain less than or equal to one page's worth ofdata (e.g., 8 kb or less for an 8 kb page size). In the example shown inFIG. 7, a respective die writes the data in its associated data segmenton one plane at the location determined by the single relative memoryaddress 706. For example, the first data segment 712 a is written to thephysical location in die 0 of the memory package that receivessub-request 700. If the single relative memory address 706 specifiesplane 0, for example, as part of the relative memory address, each datasegment 712 is written to a page in plane 0 of the die corresponding tothat data segment, where the page is identified by single relativememory address 706.

Sub-request 700 illustrates the use of memory portion markers 710interspersed among data segments 712 (e.g., positioned before each datasegment 712). In some embodiments, memory portion markers 710 are usedto indicate the respective memory portion to which each data segment 712is to be stored. As explained above, sub-request 700 is sent to alleight die of a package. Furthermore, in this example, die 2 of thepackage scans through data portion 716 of sub-request 700 until itdetects memory portion marker 710 c. In response to detecting memoryportion marker 710 c, die 2 stores data segment 712 c. In someembodiments, memory portion markers 710 are also used to indicate when arespective memory portion should stop writing data to its memory. Forexample, when die 2 detects memory portion marker 710 d, it responds todetecting marker 710 d by stopping writing data to its memory.

In some embodiments, at least one memory portion in a memory device, isprogrammed to determine which data segment 712 in data portion 716 it isassigned to store, without the use of memory portion markers 710. Forexample, die 7 is programmed to recognize that it is the eighth die in apackage and it is programmed to detect the eighth data segment 712 h, towrite to its memory.

FIG. 8 is a phase timing diagram of a third sub-request 800 inaccordance with some embodiments. FIG. 8 illustrates a sub-request 800including a first contiguous portion, instruction portion 814, and asecond contiguous portion, data portion 816. In some embodiments, theinstruction portion 814 includes a combination of addressing andprogramming instructions, such as instructions 802, 804, 806 and 808. Insome embodiments, sub-request 800 includes one contiguous set ofinstructions followed or preceded by one contiguous set of data segments812 and 813. In the example shown in FIG. 8, each data segment 812consists of one complete 8 kb page, and each data segment 813 consistsof less than 8 kb of data (i.e., less than an 8 kb page).

Sub-request 800 illustrates another streamlined approach to datastriping across memory portions of a memory device, for use when thedata division to be stored in a memory device having M memory portionsis not an integer multiple of M pages. Instruction portion 814 includesan all-die-select instruction 802 to instruct each memory portion tostart reading sub-request 800 for data corresponding to that memoryportion. This is followed by an address-initializing instruction 804 toinstruct each memory portion that a single relative memory address 806will follow. In exemplary sub-request 800, single relative memoryaddress 806 is a 5-byte address to identify a plane, block and pagewithin each memory portion (e.g., each die). In this example, anyidentification of a die in single relative memory address 806 isignored, as all-die-instruction 802 instructs each die to receive andprocess the same instructions.

In the embodiment shown in FIG. 8, data segments 812 are equally-sizedand each contain one page's worth of data (e.g., for an 8 kb page size),and data segments 813 are not necessarily equally-sized, and furthermoreeach one contains less than one page's worth of data. In this example, arespective die writes the data in its associated data segments at twolocations determined by the single relative memory address 806. Forexample, data segment 812 a is written to plane 0 and data segment 813 ais written to plane 1, at physical locations in die 0 identified bysingle relative memory address 806. In some embodiments, data segmentsare written to the first plane of a set of two or more planes, and insome embodiments, data segments are written to the last plane of a setof two or more planes.

Sub-request 800 illustrates the use of memory portion markers 810interspersed among data segments 812 and 813 (e.g., one portion marker810 positioned before each pair of data segments 812, 813). In someembodiments, memory portion markers 810 are used to indicate which datasegments 812 and/or 813 are to be stored in a respective memory portion.For example, sub-request 800 is sent to all eight die of a package. Inthis example, die 3 scans through data portion 816 of sub-request 800until it detects or reads memory portion marker 810 d. In response todetecting memory portion marker 810 d, die 3 stores data segment 812 dand stores data segment 813 d. In some embodiments, memory portionmarkers 810 are also used to indicate when a respective memory portionshould stop writing data to its memory. In this example, die 3 detectsor reads memory portion marker 810 e, and in response to detectingmarker 810 e, stops writing data to its memory.

In some embodiments, at least one memory portion in a memory device isprogrammed to determine which data segments 812 and/or 813 in the dataportion 816 it is assigned to store, without the use of memory portionmarkers 810, and without the use of individual memory addresses for eachdata segment (e.g., as shown in FIG. 4). For example, die 5 isprogrammed to recognize that it is the sixth die in a package and it isprogrammed to detect the sixth page-sized data segment 812 f and thesixth non-page-sized data segment 813 f, to write to its memory.

FIG. 9 is a phase timing diagram of a fourth sub-request 900 inaccordance with some embodiments. FIG. 9 illustrates a sub-request 900including a first contiguous portion, instruction portion 914, and asecond contiguous portion, data portion 916. In some embodiments, theinstruction portion 914 includes a combination of addressing andprogramming instructions, such as instructions 902, 904, 906, 908 and910. In some embodiments, sub-request 900 includes one contiguous set ofinstructions followed or preceded by one contiguous set of data segments912. In the example shown in FIG. 9, each data segment 912 isequally-sized and consists of two 8 kb pages or less of data.

Sub-request 900 illustrates another streamlined approach to datastriping across memory portions of a memory device. Instruction portion914 includes an all-die-select instruction 902 to instruct each memoryportion to scan data portion 916 of sub-request 900 for datacorresponding to that memory portion. This is followed by anaddress-initializing instruction 904 to instruct each memory portionthat a single relative memory address 906 will follow. In exemplarysub-request 900, single relative memory address 906 is a 5-byte addressto identify a plane, block and page within each memory portion (e.g.,each die). In this example, any identification of a die in singlerelative memory address 906 is ignored, as all-die-instruction 902instructs each die to receive and process the same instructions.

In the embodiment shown in FIG. 9, each data segment 912 isequally-sized and consists of two 8 kb pages or less of data. In thisexample, a respective die writes the data in its associated datasegments at one or more locations determined by the single relativememory address 906. For example, if data segment 912 b consists of 8 kbor less of data, it is written by die 1 to a single determined physicallocation, for example in plane 0, identified by single relative memoryaddress 906. In another example, if data segment 912 b consists of 12 kbof data, the first 8 kb of data is written to plane 0, and the remaining4 kb is written to plane 1, at physical locations in those planes of die1 identified by single relative memory address 906.

Contrary to the approaches shown in FIG. 7 and FIG. 8, sub-request 900does not use memory portion markers to indicate to a respective memoryportion of a memory device, which data segment to write to its memory.Sub-request 900 instead relies on the use of a segment mode enableinstruction 910 to instruct each memory portion of the memory device toread and store its assigned data segment 912, of a predetermined size.In some embodiments, segment mode enable instruction 910 includes (i.e.,specifies) the size of each equally-sized data segment 912. In someembodiments, at least one memory portion is programmed to detect whichdata segment 912 to store to its memory, for example by counting datasegments, or counting data bytes (or other data units) until an offsetposition (e.g., byte position=4*12 kb, for die 4) in data portion 916corresponding to the memory portion is reached.

FIG. 10 is a phase timing diagram of a first XOR sub-request 1000 inaccordance with some embodiments. Exemplary XOR sub-request 1000 is usedto back up data from data segments written to one or more memoryportions of a memory device. In some embodiments, as shown in FIG. 10,half of the storage space in a memory device is dedicated to storingdata and half of the storage space is dedicated to storing XOR or backupdata. FIG. 10 illustrates a sub-request 1000 including a firstcontiguous portion, instruction portion 1010, and a second contiguousportion, data portion 1018. In some embodiments, the instruction portion1010 includes a combination of addressing and programming instructions,such as instructions 1002, 1004, 1006 and 1008. In some embodiments,instruction portion 1010 includes an all-die-select instruction 1002 toinstruct each memory portion to scan data portion 1018 of sub-request1000 for the data portion or portions corresponding to that memoryportion. This is followed by an address-initializing instruction 1004 toinstruct each memory portion that a single relative memory address 1006will follow. Programming instruction 1008 instructs one subset of thememory portions receiving sub-request 1000 to perform a write operationand instructs another subset of the memory portions receivingsub-request 1000 to perform an XOR operation. In some embodiments, XORsub-request 1000 includes one contiguous set of instructions (e.g.,instruction portion 1010) followed or preceded by one set of datasegments 1014 and XOR instructions 1016 (e.g., data portion 1018).

Data portion 1018 optionally includes memory portion markers 1012,interspersed among data segments 1014 and XOR instructions 1016, toindicate which memory portions correspond to which data segments and towhich XOR seed values. In the example in FIG. 10, memory portion markers1012 a and 1012 b indicate that the following data segment 104 a is tobe stored in memory portion 0 and used as input to an XOR operationperformed by memory portion 1, while the second occurrence of memoryportion marker 1012 b in data portion 1018 indicates that the followingXOR instruction 1016 a specifies the seed value to be used forgenerating the XOR value to be stored in memory portion 1.

In the example shown in FIG. 10, every even numbered die (e.g., die 0,2, 4 and 6) stores a data segment and every odd numbered die (e.g., die1, 3, 5 and 7) stores data corresponding to an XOR'ed value of thepreceding data segment in sub-request 1000. In some embodiments, eachXOR'ed value is derived by performing an XOR operation using apredetermined seed value. For example, in XOR sub-request 1000, datasegment 1014 a corresponds to data to be written to die 0, and XORinstruction 1016 a corresponds to XOR data of data segment 1014 a to bewritten to die 1.

In some embodiments, XOR instructions 1016 include a seed value to usefor performing an XOR operation on a preceding data segment. Forexample, die 1 uses a seed value (e.g., a pseudo-random number) obtainedfrom XOR instruction 1016 a to perform an XOR operation on data segment1014 a. In some embodiments, a respective predefined seed value isstored on the one or more memory portions used to store XOR or backupdata. In some embodiments, an XOR operation on a data segment isperformed using address 1006 of XOR sub-request 1000. For example, thepredefined seed value is single relative memory address 1006,specifically, or is a result of a predefined operation on singlerelative memory address 1006. In some embodiments, the predefined seedvalue is pre-loaded onto each memory portion and in some embodiments,each memory portion of the plurality of memory portions uses the samepredefined seed value. In some embodiments, a predefined seed valuestored in a memory portion is derived from a data segment. For example,the predefined seed value for die 1 is derived from the first and/orlast X bytes of data segment 1014 a.

In some alternative embodiments, an XOR sub-request includes aninstruction portion 1010 as shown in FIG. 10, and includes a dataportion that includes only a sequence of data segments without anymemory portion markers 1012 and without any XOR instructions 1016. Inthese embodiments, command 1008 specifies or otherwise indicates whichmemory portions are to store data from data portion 1018 and whichmemory portion or portion are to generate and store XOR values. In afirst example, command 1008 specifies that memory portions 0 to N−1 areto store N data segments 1014 in data portion 1018, and that memoryportion N is to generate and store an XOR of data segments 0 to N−1. Ina second example, command 1008 specifies that even numbered memoryportions 0, 2, 4, etc. are to store corresponding data segments 1014 indata portion 1018, and that even numbered memory portions are togenerate and store XOR values in accordance with predefined criteria(e.g., using a seed value specified by command 1008, or a predefinedseed value, or a seed value previously stored in the odd numbered memoryportions, etc.).

FIG. 11A is a diagram of a first XOR sub-request processing architecturein accordance with some embodiments. FIG. 11A illustrates that in someembodiments, the one or more XOR instructions of an XOR sub-requestincludes an instruction for a particular memory portion of the M memoryportions in a memory device to generate an XOR of N data segments (whereN is greater than one), and to store the resulting XOR value in theparticular memory portion. For example, as shown in FIG. 11A, one memoryportion (die3) stores the generated XOR of the preceding data segmentsstored to the preceding memory portions (e.g., die0, die1 and die2). Inthis example, the generated XOR value is derived by performingsequential XOR operations on the N data segments, for example: (datasegment A XOR data segment B) XOR data segment C. FIG. 11A illustratesthat one or more memory portions (e.g., die) of the memory device (e.g.,package) saves the XOR operation result of respective bytes on all othermemory portions. For example, for every byte position I in the generatedXOR value, the I^(th) byte of the generated XOR value is generated byXORing the I^(th) byte stored to all the other memory portions in thesame memory device (e.g., package). In the case of failure of any of thememory portions in the memory device, other than the XOR memory portion,the XOR memory portion is used to recover data from the failed memoryportion by XORing the corresponding XOR value in the XOR memory portionwith corresponding data values read from the other memory portions(excluding the failed memory portion).

FIG. 11B is a diagram of a second XOR sub-request processingarchitecture in accordance with some embodiments. In some embodiments,the one or more XOR instructions of an XOR sub-request includes aninstruction for each memory portion of two or more of the M memoryportions in a memory device to generate an XOR of a particular pair of Ndata segments (where N is greater than one), and to store the resultingXOR value in the particular memory portion. For example, as shown inFIG. 11B, an XOR value is generated from a first data segment (e.g.,data segment A written to die0) and a second data segment (e.g., datasegment B written to die1, or a seed value), and the XOR value is storedin die1. In some embodiments, the one or more memory portions storingXOR values do not store any of the data segments specified by the XORsub-request and instead store only XOR values.

FIG. 12 illustrates a flowchart representation of a method 1200 ofperforming data striping at a storage controller in accordance with someembodiments. The method is performed in a storage system (e.g., storagesystem 100, FIG. 1), the storage system having one or more memorycontrollers (e.g., memory controller 120, FIG. 1) and a set of memorydevices (e.g., storage device 130, FIG. 1). Each memory device comprisesa number, greater than one, of memory portions (e.g., memory portions131, FIG. 1). In some embodiments, the storage system includes one ormore three-dimensional (3D) memory devices, each with a 3D array ofmemory cells, and circuitry associated with operation of memory elementsin the one or more 3D memory devices. In some embodiments, the circuitryand one or more memory elements in a respective 3D memory device, of theone or more 3D memory devices, are on the same substrate.

A memory controller of the storage system receives (1202) a host commandto perform a memory operation, where the host command includes a datapacket comprising a plurality of data divisions. For example, the hostcommand includes a command to write the data in a data packet tonon-volatile memory of the storage system. In this example, the datapacket includes sub-sets of data that are called data divisions. In someembodiments, one data division of the plurality of data divisionscorresponds to one memory device (e.g., a memory package). In someembodiments or in some circumstances, each data division of theplurality of data divisions is equally-sized. However, in some otherembodiments or in some circumstances, the data packet is divided into Ddata divisions, where D is an integer. When D is greater than one, thefirst D−1 of the data divisions each has a predefined size (e.g., equalto a predefined number of pages multiplied by the number of memoryportions in the memory device in which the data division will bestored), and the last data division has the remaining data of the datapacket and has a size no greater than the predefined size.

In response to receiving the host command, for each individual memorydevice of a plurality of the memory devices in the set of memorydevices, the memory controller assigns (1204) to the individual memorydevice a respective data division of the plurality of data divisions.For example, if the received data packet has four data divisions, fourof the memory devices in the storage system are each assigned arespective data division of the four data divisions. In someembodiments, the number of data divisions in the received data packetdoes not necessarily equal the number of memory devices in the storagesystem. Thus, any particular received data packet can have fewer datadivisions that there are memory devices, or more data divisions thanthere are memory devices. But in some circumstances a received datapacket will have the same number of data divisions as there are memorydevices in the storage system.

The respective data division assigned to an individual memory deviceincludes a plurality of data segments, and each of the data segments ofthe respective data division corresponds solely to a distinct individualone of the memory portions of the individual memory device. For example,in response to receiving the host command, the memory controller, in asystem containing four memory packages, assigns a portion of data in thereceived data packet (i.e., a data division), to a first memory package.In this example, the first memory package contains eight die, and thedata division contains eight data segments, where each data segmentcorresponds to a distinct die. In some embodiments, each data segment ofa data division is equally-sized. For purposes of explaining method1200, it is assumed that the received data packet includes a pluralityof data divisions. However, it should be understood that in somecircumstances, a received data packet will have only a single datadivision.

In some embodiments, the respective data division (1206) in thesub-request corresponds to a contiguous portion of the data packet inthe received host command. For example, as shown in FIG. 5B, datadivision 513 is the first of four data divisions of data packet D. Inthis example, each of the data divisions corresponds to and includes adistinct, non-overlapping contiguous portion of the data in data packetD. In some embodiments, the data division includes a contiguous portionof the data packet, but also includes additional information such aserror correction information and/or metadata.

In some embodiments, the respective data division includes (1208) a samenumber of data segments as the number of memory portions of theindividual memory device, and each of the data segments correspondssolely to an individual one of the memory portions of the individualmemory device. In some embodiments, the respective data divisionincludes (1210) M data segments, where M is an integer greater than one,and each data segment of the M data segments comprises one or more pagesof data. In some embodiments, the number of data segments, M, is equalto the number of memory portions, N, but in some embodiments the numberof data segments is equal to N−1, N/2, or another number less than N.

In some embodiments, the respective data division includes (1212) M datasegments, where M is greater than one, and each data segment of the Mdata segments has a size equal to a non-integer multiple of the size ofa page of data. For example, each data segment has a size smaller than apage of data, or alternatively has a size greater than one page of dataand less than two pages of data. In some embodiments, the respectivedata division (1214) has a size equal to M multiplied by a data segmentsize, where M is an integer greater than one. In some embodiments, eachmemory portion (1216) corresponds to a single die.

In response to receiving the host command, for each individual memorydevice of the set of memory devices, the memory controller determines(1218) a single relative memory address associated with an addressspecified by the received host command. As explained above withreference to FIG. 5, in some embodiments, the single relative memoryaddress is an offset value. For example, in some embodiments the singlerelative memory address 606 is an offset value, that identifies a blockand a page number within each memory portion (e.g., flash memory die) inthe individual memory device, and in other examples is another subset ofa complete physical memory address. In some embodiments, the singlerelative memory address specifies or corresponds to the same physicalmemory address within each memory portion (e.g., the same local physicaladdress, indicating the same block B and page P, within each flashmemory die in the memory device).

In some embodiments, the single relative memory address identifies(1220) a plane, a block and a page in each memory portion of theindividual memory device. In some embodiments, the single relativememory address of the sub-request does not include (1222) distinctmemory addresses for each memory portion of the individual memorydevice. For example, single relative memory address 606 of sub-request600 in FIG. 6 does not include distinct memory addresses for each datasegment of memory portion.

Further in response to receiving the host command, for each individualmemory device of the set of memory devices, the memory controllerassembles (1224) a sub-request comprising a single contiguousinstruction portion, which includes the single relative memory addressand a set of one or more instructions to perform the memory operation,and the respective data division, the respective data division followingthe single contiguous instruction portion. For example, sub-request 600in FIG. 6 illustrates a sub-request comprising instruction portion 612,which includes single relative memory address 606 and a set ofinstructions, and data segments 610 of a particular data division 614.

In some embodiments, the memory operation is (1226) a write operationand the single contiguous instruction portion of the sub-requestincludes a set of one or more write instructions. For example,programming instructions 608, 708, 808 and 908 in FIGS. 6-9 include oneor more write instructions for writing data segments to memory. In someembodiments, the memory operation is a read operation and thesub-request includes a single contiguous set of one or more readinstructions. In some embodiments, if the memory operation is a readoperation, the single contiguous instruction portion of the sub-requestincludes a single relative memory address, but does not include one ormore data segments or a data division. In this case, the single readsub-request is still broadcast to each memory portion, and each memoryportion retrieves corresponding data (e.g., a page of data, two pages ofdata, less than a page of data) from its storage space and loads thecorresponding data into a buffer (e.g., data buffer 133, FIG. 1). Insome embodiments, the buffered contents are received from each memoryportion in a fixed order (e.g., from die 0 to die M−1), or selectivelyfrom each memory portion using memory portion markers.

In some embodiments, the memory operation is an erase operation and thesingle contiguous instruction portion of the sub-request includes a setof one or more read instructions and a single relative memory address,but does not include one or more data segments or a data division. Inthis case, the single erase sub-request is still broadcast to eachmemory portion, and each memory portion erases the data corresponding tothe single relative memory address received in the sub-request.

In some embodiments, as shown in FIG. 6, the sub-request 600 does notinclude (1228) a data completion command positioned after any of thedata segments 610 in data portion 614 of the sub-request, and insteadall commands in the sub-request are positioned in the sub-request beforethe data segments 610 in data portion 614. The command or commands inthe instruction portion 612 directly or indirectly indicate the segmentsize of the data segments 610, and instead of having a data completioncommand positioned to indicate the end of each data segment 610, each ofthe memory portion in the memory device is responsible for determiningthe beginning and end of the data segment to be written in that memoryportion.

In some embodiments or in some circumstances, the sub-request furtherincludes (1230) memory portion markers positioned between neighboringdata segments of the M data segments. For example, the sub-requestincludes M−1 memory portion markers between the M data segments, wherethe memory portion markers are not instructions to perform memoryoperations. In another example, the sub-request includes a memoryportion marker before each of the M data segments in the data portion ofthe sub-request. The example shown in FIG. 7 illustrates the use ofeight memory portion markers, each positioned before a correspondingdata segment of eight data segments, including marker 710 a at the startof data portion 716. In some embodiments, memory portion markers areused to indicate which data segment is to be stored in respective memoryportion. For example, as shown in FIG. 7, sub-request 700 is sent to alleight die of a package, and die 2 reads through sub-request 700 until itdetects or reads memory portion marker 710 c. In response to detectingmemory portion marker 710 c, die 2 stores data segment 712 c. In someembodiments, memory portion markers 710 are also used to indicate when arespective memory portion should stop writing data to its memory.

Further in response to receiving the host command, for each individualmemory device of the set of memory devices, the memory controllertransmits (1232) the sub-request (for that individual memory device) toevery memory portion of the number of memory portions of the individualmemory device.

In some embodiments, the memory controller performs (1234) a wearleveling operation, including assigning a single wear level to thephysical locations in the M memory portions corresponding to the singlerelative memory address. As a result, the wear leveling operation treatseach stripe of physical locations across the M memory portions (e.g., Mflash memory die), in a memory device as a single entity for purposes ofwear leveling. The memory locations in each stripe of physical locationsall correspond to a single shared relative memory address. In oneexample, each stripe in a memory device is specified by a plane, blockand page offset from the base physical memory address for each die in amemory device.

FIG. 13 illustrates a flowchart representation of a method 1300 ofperforming memory operations at a particular memory portion (hereincalled the first memory portion) in a memory device, in a storage systemhaving a set of such memory devices, in accordance with someembodiments. The method is performed in a storage system (e.g., storagesystem 100, FIG. 1), the storage system having one or more memorycontrollers (e.g., memory controller 120, FIG. 1) and a set of memorydevices (e.g., storage device 130, FIG. 1). Each memory device includesa number, greater than one, of memory portions (e.g., memory portions131, FIG. 1). In some embodiments, the storage system includes one ormore three-dimensional (3D) memory devices, each with a 3D array ofmemory cells, and circuitry associated with operation of memory elementsin the one or more 3D memory devices. In some embodiments, the circuitryand one or more memory elements in a respective 3D memory device, of theone or more 3D memory devices, are on the same substrate.

A first memory portion (e.g., a first die) of the plurality of memoryportions in a memory device determines (1302) a designated position ofthe first memory portion in the memory device. For example, the firstmemory portion is die4 in FIG. 6, and die4 determines that it is thefifth die in a set of five or more die in a memory device. In someembodiments, the first memory portion determines its relative designatedposition among the plurality of memory portions (e.g., die4 determinesthat it is the fifth die out of eight die). In some embodiments, thefirst memory portion determines its designated position withoutdetermining its relative designated position among the plurality ofmemory portions, or without determining how many memory portions are inthe plurality of memory portions. For example, die4 determines that itis the fifth die, but does not determine that there are eight die in thesame package (memory device) in which die4 is located.

The first memory portion receives (1304) a sub-request, which includes asingle contiguous instruction portion and a plurality of data segmentsof a data packet, in accordance with a host command. The singlecontiguous instruction portion includes a single relative memory addressand a set of one or more instructions to write the data segments.Typically, the data segments are received following the instructionportion of the sub-request. For example, in FIG. 6, sub-request 600 issent to all eight die of a particular package, including die4, the firstmemory portion. Sub-request 600 includes instruction portion 612, whichincludes single relative memory address 606 and a set of one or moreinstructions to write data segments 610 of data portion 614.

In some embodiments, each data segment includes (1306) one or more pagesof data. The example shown in FIG. 6 portrays data segments 610 eachhaving two pages of data. In some embodiments or in some circumstances,each data segment has (1308) a size equal to a non-integer multiple ofthe size of a page of data. For example, as shown in FIG. 9, each datasegment 912 has a predefined size which can include a size equal to anon-integer multiple of the size of a page of data (e.g., data segment912 a is 12 kb, whereas a page is 8 kb). The example shown in FIG. 8shows two data segments 812 and 813 assigned to each memory portion, butin some embodiments data segments 812 and 813 are considered to be onedata segment. In some embodiments, as shown in FIG. 8, the sub-requestfurther comprises (1310) memory portion markers positioned betweenneighboring data segments, and identifying the first data segmentincludes detecting receipt of a memory portion marker.

In some embodiments, the single relative memory address identifies(1312) a plane, a block and a page in each memory portion of theplurality of memory portions. In some embodiments, the single relativememory address of the sub-request does not include (1314) distinctmemory addresses for each memory portion of the memory device thatincludes the first memory portion. For example, single relative memoryaddress 606 in FIG. 6 is one address identifying the same block and pagenumber in each of the eight die of a package.

The first memory portion detects (1316) that the received sub-requestincludes an instruction to write data. For example, programminginstruction 608 in sub-request 600 in FIG. 6 instructs every memoryportion receiving sub-request 600 to write data. In this example, firstmemory portion die4 detects the instruction to write data withininstruction 608.

In response to detecting the instruction to write data, the first memoryportion identifies (1318), of the plurality of data segments, a firstdata segment allocated to the first memory portion. In FIG. 6, firstmemory portion die4 is the fifth die in the package, and thereforeidentifies that the fifth data segment, 610 e, within data portion 614is allocated for die4.

The first memory portion also places (1320) the first data segment intoa buffer (e.g., data buffer 133, FIG. 1) for the first memory portion.In some embodiments, each memory portion has a buffer for temporarilystoring incoming and outgoing data segments. The first memory portionwrites (1322) the buffered first data segment to a location innon-volatile memory of the first memory portion, the locationcorresponding to the relative memory address.

In some embodiments, the first memory portion determines (1324) if afirst location in non-volatile memory of the first memory portion,identified in accordance with the relative memory address, includes oneor more bad memory sub-portions. In some embodiments, in accordance witha determination that the first location includes one or more bad memorysub-portions, the first memory portion writes (1326) the buffered firstdata segment to a second location in non-volatile memory of the firstmemory portion, the second location corresponding to a remapping of thefirst location. In some embodiments, in accordance with a determinationthat the first location does not include any bad memory sub-portions,the first memory portion writes the buffered first data segment to thefirst location.

In some embodiments, a memory portion will remap a bad memorysub-portion internally with a good memory sub-portion, if the badportion was already determined to be bad before the memory portionreceived a sub-request. In some embodiments, a memory portion will add asub-portion detected to be bad, into an internally stored bad memorysub-portion list and will automatically remap its location to that of aknown good sub-portion. In some embodiments, the buffered data segmentwill automatically write to the remapped second sub-portion inside amemory portion without waiting for a determination of whether or not thedata segment is being written to a location with any bad memorysub-portions.

FIGS. 14A-14B illustrate a flowchart representation of a method ofbacking up data in a storage system in accordance with some embodiments.The method is performed in a storage system (e.g., storage system 100,FIG. 1), the storage system having one or more memory controllers (e.g.,memory controller 120, FIG. 1) and a set of memory devices (e.g.,storage device 130, FIG. 1). Each memory device comprises a plurality ofmemory portions (e.g., memory portions 131, FIG. 1). In someembodiments, the storage system comprises one or more three-dimensional(3D) memory devices, each with a 3D array of memory cells, and circuitryassociated with operation of memory elements in the one or more 3Dmemory devices. In some embodiments, the circuitry and one or morememory elements in a respective 3D memory device, of the one or more 3Dmemory devices, are on the same substrate.

The memory controller receives (1402) a host command to write data,where the host command includes a data packet that includes one or moredata divisions. Optionally, in some embodiments, the host commandincludes a backup request to backup at least a portion of the datapacket. However, in other embodiments, the received host command doesnot include a data backup request, and instead received write data isbacked up automatically, without having to receive a backup request froma host system.

In response to receiving the host command (1404), the memory controllerassigns (1406) a first data division of the data packet to a firstmemory device having M memory portions, where M is an integer greaterthan one, and the first data division includes a sequence of N datasegments, where N is an integer less than M. For example, for RAIDstripe implementations, N=M−1, in which case there is one more memoryportion than the number of data segments in the first data division. Insome embodiments, N=M/2, to allow for a one-to-one backup of every datasegment.

The memory controller determines (1408) a single relative memory addressassociated with (an address specified by) the host command. Variousembodiments of the single relative memory address are discussed abovewith reference to FIG. 5.

The memory controller assembles (1410) a sub-request comprising thesingle relative memory address, the N data segments of the first datadivision, a set of one or more instructions to write the N data segmentsin N memory portions of the first memory device, perform an XORoperation on one or more of the N data segments, and to write aresulting XOR value in a particular memory portion of the M memoryportions in the first memory device. For example, as shown in FIG. 10,sub-request 1000 includes single relative memory address 1006 and fourdata segments 1014. Sub-request 1000 also includes a set of instructionssuch as programming instruction 1008 indicating to die 0, die 2, die 4and die 6 to write corresponding data segments to their memory, and XORinstructions 1016 to indicate to die 1, die 3, die 5 and die 7 toperform an XOR operation on a respective data segment (e.g., the datasegment preceding each XOR instruction) in the sub-request. In thisexample, the resulting XOR values are stored in die 1, die 3, die 5 anddie 7, respectively.

In some embodiments, the one or more XOR instructions includes (1412)information to perform an XOR operation at a first memory portion of theM memory portions using at least one data segment in the sub-request anda predefined seed value stored in the first memory portion. In someembodiments, the predefined seed value stored (1414) in the first memoryportion is derived from the at least one data segment. For example, thepredefined seed value is derived from the first and/or last X bytes ofthe at least one data segment. In some embodiments, the predefined seedvalue stored (1416) in the first memory portion is derived from thesingle relative memory address. For example, the predefined seed valueis the 5-byte or 3-byte address, specifically, or is a result of apredefined operation on the single relative memory address. In someembodiments, the predefined seed value is pre-loaded onto each memoryportion that is to perform an XOR operation, and in some embodiments,each memory portion that is to perform an XOR operation uses the samepredefined seed value.

In some embodiments, the set of instructions includes an instruction(1418) for the particular memory portion of the M memory portions togenerate an XOR of all N data segments and to store the resulting XORvalue in the particular memory portion. For example, as shown in FIG.11A, one memory portion (die3) stores the generated XOR of the precedingdata segments stored to the preceding memory portions (e.g., die0, die1and die2).

In some embodiments, the one or more XOR instructions includes (1420) aninstruction for each memory portion of two or more of the M memoryportions to generate an XOR of a particular pair of the N data segmentsand to store the resulting XOR value in the particular memory portion.For example, as shown in FIG. 11B, an XOR value is generated of a firstdata segment (e.g., the data segment written to die0) and a second datasegment (e.g., the data segment written to die1), and the XOR value isstored in die1. In some embodiments, the memory portion storing the XORvalue does not store any of the N data segments.

In some embodiments, the number of data segments, N is equal to thenumber of memory portions, M, and the set of instructions includes(1422) an instruction for the particular memory portion to generate anXOR of a data segment corresponding to the particular memory portion,and to store the resulting XOR value in the particular memory portion.For example, in a given storage system, a memory device (e.g., apackage) contains eight memory portions (e.g., eight die) and asub-request is sent to the eight memory portions containing eight datasegments. In this example, an XOR value is generated for each datasegment (e.g., eight XOR values are generated), and each XOR value isstored in the same memory portion as its corresponding data segment(e.g., the fourth data segment is stored in the fourth die, and the XORvalue of the fourth data segment is also stored in the fourth die).

In some embodiments, each data segment has (1424) a size equal to anon-integer multiple of the size of a page of data, and the sub-requestfurther comprises memory portion markers positioned among the datasegments. For example, as shown in FIG. 10, sub-request 1000 has aplurality of memory portion markers 1012, interspersed among datasegments 1014 and XOR instructions 1016. In some embodiments, memoryportion markers in the sub-request are used to indicate which datasegment is to be stored for a respective memory portion, and/or whichXOR value is to be stored for a respective memory portion.

The memory controller transmits (1426) the sub-request to every memoryportion of the M memory portions of the first memory device.

Semiconductor memory devices include volatile memory devices, such asdynamic random access memory (“DRAM”) or static random access memory(“SRAM”) devices, non-volatile memory devices, such as resistive randomaccess memory (“ReRAM”), electrically erasable programmable read onlymemory (“EEPROM”), flash memory (which can also be considered a subsetof EEPROM), ferroelectric random access memory (“FRAM”), andmagnetoresistive random access memory (“MRAM”), and other semiconductorelements capable of storing information. Each type of memory device mayhave different configurations. For example, flash memory devices may beconfigured in a NAND or a NOR configuration.

The memory devices can be formed from passive and/or active elements, inany combinations. By way of non-limiting example, passive semiconductormemory elements include ReRAM device elements, which in some embodimentsinclude a resistivity switching storage element, such as an anti-fuse,phase change material, etc., and optionally a steering element, such asa diode, etc. Further by way of non-limiting example, activesemiconductor memory elements include EEPROM and flash memory deviceelements, which in some embodiments include elements containing a chargestorage region, such as a floating gate, conductive nanoparticles, or acharge storage dielectric material.

Multiple memory elements may be configured so that they are connected inseries or so that each element is individually accessible. By way ofnon-limiting example, flash memory devices in a NAND configuration (NANDmemory) typically contain memory elements connected in series. A NANDmemory array may be configured so that the array is composed of multiplestrings of memory in which a string is composed of multiple memoryelements sharing a single bit line and accessed as a group.Alternatively, memory elements may be configured so that each element isindividually accessible (e.g., a NOR memory array). NAND and NOR memoryconfigurations are exemplary, and memory elements may be otherwiseconfigured.

The semiconductor memory elements located within and/or over a substratemay be arranged in two or three dimensions, such as a two dimensionalmemory structure or a three-dimensional memory structure.

In a two dimensional memory structure, the semiconductor memory elementsare arranged in a single plane or a single memory device level.Typically, in a two dimensional memory structure, memory elements arearranged in a plane (e.g., in an x-z direction plane) which extendssubstantially parallel to a major surface of a substrate that supportsthe memory elements. The substrate may be a wafer over or in which thelayer of the memory elements are formed or it may be a carrier substratewhich is attached to the memory elements after they are formed. As anon-limiting example, the substrate may include a semiconductor such assilicon.

The memory elements may be arranged in the single memory device level inan ordered array, such as in a plurality of rows and/or columns.However, the memory elements may be arrayed in non-regular ornon-orthogonal configurations. The memory elements may each have two ormore electrodes or contact lines, such as bit lines and word lines.

A three-dimensional memory array is arranged so that memory elementsoccupy multiple planes or multiple memory device levels, thereby forminga structure in three dimensions (i.e., in the x, y and z directions,where the y direction is substantially perpendicular and the x and zdirections are substantially parallel to the major surface of thesubstrate).

As a non-limiting example, a three-dimensional memory structure may bevertically arranged as a stack of multiple two dimensional memory devicelevels. As another non-limiting example, a three-dimensional memoryarray may be arranged as multiple vertical columns (e.g., columnsextending substantially perpendicular to the major surface of thesubstrate, i.e., in the y direction) with each column having multiplememory elements in each column. The columns may be arranged in a twodimensional configuration (e.g., in an x-z plane), resulting in athree-dimensional arrangement of memory elements with elements onmultiple vertically stacked memory planes. Other configurations ofmemory elements in three dimensions can also constitute athree-dimensional memory array.

By way of non-limiting example, in a three-dimensional NAND memoryarray, the memory elements may be coupled together to form a NAND stringwithin a single horizontal (e.g., x-z) memory device level.Alternatively, the memory elements may be coupled together to form avertical NAND string that traverses across multiple horizontal memorydevice levels. Other three-dimensional configurations can be envisionedwherein some NAND strings contain memory elements in a single memorylevel while other strings contain memory elements which span throughmultiple memory levels. Three-dimensional memory arrays may also bedesigned in a NOR configuration and in a ReRAM configuration.

Typically, in a monolithic three-dimensional memory array, one or morememory device levels are formed above a single substrate. Optionally,the monolithic three-dimensional memory array may also have one or morememory layers at least partially within the single substrate. As anon-limiting example, the substrate may include a semiconductor such assilicon. In a monolithic three-dimensional array, the layersconstituting each memory device level of the array are typically formedon the layers of the underlying memory device levels of the array.However, layers of adjacent memory device levels of a monolithicthree-dimensional memory array may be shared or have intervening layersbetween memory device levels.

Then again, two dimensional arrays may be formed separately and thenpackaged together to form a non-monolithic memory device having multiplelayers of memory. For example, non-monolithic stacked memories can beconstructed by forming memory levels on separate substrates and thenstacking the memory levels atop each other. The substrates may bethinned or removed from the memory device levels before stacking, but asthe memory device levels are initially formed over separate substrates,the resulting memory arrays are not monolithic three-dimensional memoryarrays. Further, multiple two dimensional memory arrays orthree-dimensional memory arrays (monolithic or non-monolithic) may beformed on separate chips and then packaged together to form astacked-chip memory device.

Associated circuitry is typically required for operation of the memoryelements and for communication with the memory elements. As non-limitingexamples, memory devices may have circuitry used for controlling anddriving memory elements to accomplish functions such as programming andreading. This associated circuitry may be on the same substrate as thememory elements and/or on a separate substrate. For example, acontroller for memory read-write operations may be located on a separatecontroller chip and/or on the same substrate as the memory elements.

The term “three-dimensional memory device” (or 3D memory device) isherein defined to mean a memory device having multiple layers ormultiple levels (e.g., sometimes called multiple memory levels) ofmemory elements, including any of the following: a memory device havinga monolithic or non-monolithic 3D memory array, some non-limitingexamples of which are described above; or two or more 2D and/or 3Dmemory devices, packaged together to form a stacked-chip memory device,some non-limiting examples of which are described above.

A person skilled in the art will recognize that the invention orinventions described and claimed herein are not limited to the twodimensional and three-dimensional exemplary structures described here,and instead cover all relevant memory structures suitable forimplementing the invention or inventions as described herein and asunderstood by one skilled in the art.

It will be understood that, although the terms “first,” “second,” etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. For example, a first trigger condition couldbe termed a second trigger condition, and, similarly, a second triggercondition could be termed a first trigger condition, without changingthe meaning of the description, so long as all occurrences of the “firsttrigger condition” are renamed consistently and all occurrences of the“second trigger condition” are renamed consistently. The first triggercondition and the second trigger condition are both trigger conditions,but they are not the same trigger condition.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the claims. Asused in the description of the embodiments and the appended claims, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willalso be understood that the term “and/or” as used herein refers to andencompasses any and all possible combinations of one or more of theassociated listed items. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

As used herein, the term “if” may be construed to mean “when” or “upon”or “in response to determining” or “in accordance with a determination”or “in response to detecting,” that a stated condition precedent istrue, depending on the context. Similarly, the phrase “if it isdetermined [that a stated condition precedent is true]” or “if [a statedcondition precedent is true]” or “when [a stated condition precedent istrue]” may be construed to mean “upon determining” or “in response todetermining” or “in accordance with a determination” or “upon detecting”or “in response to detecting” that the stated condition precedent istrue, depending on the context.

The foregoing description, for purpose of explanation, has beendescribed with reference to specific implementations. However, theillustrative discussions above are not intended to be exhaustive or tolimit the claims to the precise forms disclosed. Many modifications andvariations are possible in view of the above teachings. Theimplementations were chosen and described in order to best explainprinciples of operation and practical applications, to thereby enableothers skilled in the art.

What is claimed is:
 1. A method of performing memory operations in astorage system, the storage system having one or more memory controllersand a set of memory devices, each memory device comprising a pluralityof memory portions, the method comprising: at a first memory portion ofthe plurality of memory portions in a first memory device of the set ofmemory devices: determining a designated position of the first memoryportion; receiving a sub-request conveyed to the plurality of memoryportions in the first memory device, wherein the sub-request comprises asingle contiguous instruction portion and a plurality of data segmentsof a data packet, and wherein the single contiguous instruction portioncomprises a single relative memory address and a single set of one ormore instructions to write the plurality of data segments; detectingthat the received sub-request includes an instruction to write data; andin response to detecting the instruction to write data: identifying, ofthe plurality of data segments, a first data segment allocated to thefirst memory portion; placing the first data segment into a buffer ofthe first memory portion; and writing the buffered first data segment toa location in non-volatile memory of the first memory portion, thelocation corresponding to the single relative memory address.
 2. Themethod of claim 1, wherein each data segment comprises one or more pagesof data.
 3. The method of claim 1, wherein each data segment has a sizeequal to a non-integer multiple of the size of a page of data.
 4. Themethod of claim 3, wherein the sub-request further comprises memoryportion markers positioned between neighboring data segments, andwherein identifying the first data segment includes detecting receipt ofa memory portion marker.
 5. The method of claim 1, wherein writing thebuffered first data segment includes: determining if a first location innon-volatile memory of the first memory portion, identified inaccordance with the relative memory address, includes one or more badmemory sub-portions; and in accordance with a determination that thefirst location includes one or more bad memory sub-portions, writing thebuffered first data segment to a second location in non-volatile memoryof the first memory portion, the second location corresponding to aremapping of the first location.
 6. The method of claim 1, wherein thesingle relative memory address identifies a page in each memory portionof the plurality of memory portions.
 7. The method of claim 1, whereinthe first memory portion corresponds to a single die.
 8. The method ofclaim 1, wherein the single relative memory address of the sub-requestdoes not include distinct memory addresses for each memory portion ofthe first memory device.
 9. A storage system, comprising: a storagedevice that includes a set of memory devices, a first memory device ofthe set of memory devices comprising a plurality of memory portions; thestorage device further including one or more memory controllers forcontrolling operation of the storage system and responding to hostcommands; wherein a first memory portion of the plurality of memoryportions in the first memory device is configured to perform memoryoperations, including: determining a designated position of the firstmemory portion within the first memory device; receiving a sub-requestconveyed to the plurality of memory portions in the first memory device,wherein the sub-request comprises a single contiguous instructionportion and a plurality of data segments of a data packet, and thesingle contiguous instruction portion comprises a single relative memoryaddress and a single set of one or more instructions to write theplurality of data segments; detecting that the received sub-requestincludes an instruction to write data; and in response to detecting theinstruction to write data: identifying, of the plurality of datasegments, a first data segment allocated to the first memory portion;placing the first data segment into a buffer of the first memoryportion; and writing the buffered first data segment to a location innon-volatile memory of the first memory portion, the locationcorresponding to the single relative memory address.
 10. The storagesystem of claim 9, wherein the first memory device includes read/writecircuitry for selecting the location in non-volatile memory of the firstmemory portion, the location corresponding to the single relative memoryaddress, and for causing performance of a write operation to write thebuffered first data segment to the selected location in non-volatilememory of the first memory portion.
 11. The storage system of claim 9,wherein the storage device includes read/write circuitry for selectingthe location in non-volatile memory of the first memory portion, thelocation corresponding to the single relative memory address, and forcausing performance of a write operation to write the buffered firstdata segment to the selected location in non-volatile memory of thefirst memory portion.
 12. The storage system of claim 9, wherein eachdata segment comprises one or more pages of data.
 13. The storage systemof claim 9, wherein each data segment has a size equal to a non-integermultiple of the size of a page of data.
 14. The storage system of claim13, wherein the sub-request further comprises memory portion markerspositioned between neighboring data segments, and wherein identifyingthe first data segment includes detecting receipt of a memory portionmarker.
 15. The storage system of claim 9, wherein writing the bufferedfirst data segment includes: determining if a first location innon-volatile memory of the first memory portion, identified inaccordance with the relative memory address, includes one or more badmemory sub-portions; and in accordance with a determination that thefirst location includes one or more bad memory sub-portions, writing thebuffered first data segment to a second location in non-volatile memoryof the first memory portion, the second location corresponding to aremapping of the first location.
 16. The storage system of claim 9,wherein the single relative memory address identifies a page in eachmemory portion of the plurality of memory portions.
 17. The storagesystem of claim 9, wherein the first memory portion corresponds to asingle die.
 18. The storage system of claim 9, wherein the singlerelative memory address of the sub-request does not include distinctmemory addresses for each memory portion of the first memory device. 19.A non-transitory computer readable storage medium storing one or moreprograms, the one or more programs comprising instructions, which, whenexecuted by a local controller, comprising one or more processors and/orstate machines, cause a first memory portion of a plurality of memoryportions in a first memory device to: determine a designated position ofthe first memory portion; receive a sub-request conveyed to theplurality of memory portions in the first memory device, wherein thesub-request comprises a single contiguous instruction portion and aplurality of data segments of a data packet, and wherein the singlecontiguous instruction portion comprises a single relative memoryaddress and a single set of one or more instructions to write theplurality of data segments; detect that the received sub-requestincludes an instruction to write data; and in response to detecting theinstruction to write data: identify, of the plurality of data segments,a first data segment allocated to the first memory portion; place thefirst data segment into a buffer of the first memory portion; and writethe buffered first data segment to a location in non-volatile memory ofthe first memory portion, the location corresponding to the singlerelative memory address.
 20. The non-transitory computer readablestorage medium of claim 19, wherein each data segment comprises one ormore pages of data.